Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started mass production of " TB9103FTG ," a gate driver IC [1] for automotive brushed DC motors, including the latch motors [2] and ...

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started mass production of "TB9103FTG," a gate driver ...

Finland may soon become the first country to develop a permanent way to store spent nuclear fuel by burying it in tunnels ...

As the trend of electrification in automotive systems accelerates, the integration of motors into vehicles has surged, necessitating an increase in their quantity and efficiency. The TB9103FTG gate ...

A 650-V bi-directional GaN IC combined with a high-speed isolated gate driver facilitates single-stage power conversion.

Responding to farmers' hardships due to dysfunctional gates at the Kadam project, irrigation officials undertook necessary ...

Maintenance cost : The life of low-reliability domestic silicon carbide MOSFET devices is only 1-2 years (the life of ...

Gates, who is worth $106.5 billion ... has invested in roughly 100 companies developing technologies for energy storage, sustainable aviation and carbon capture, among other sectors.

CHP arrests Claudia Cruzbarragan, recovering $780K in stolen goods, in a fight against organized retail theft.

The ultimate power semiconductor switch (transistor) can block voltage and allow current flow in two directions, with the highest efficiency. Navitas’ leadership in GaN innovation has delivered this ...

Construction of a groundbreaking £200 million scheme to protect the English city of Leeds from extreme flood risk is complete ...

Navitas Semiconducto announced a latest breakthrough of the world’s first production-released 650 V bi-directional GaNFast ICs and high-speed ...